Nanoimprint process using epoxy-siloxane low-viscosity prepolymer
Chemical formulation of the prepolymer used in this study (a) BAC, (b) BAB, and (c) DMS–DGE.
150 nm line and space pattern imprinted with DMS–DGE and BAC.
60 nm interdigitated lines with a 200 nm period. On the right, magnified image of printed lines shows the smooth, well-defined edges.
Transfer process of imprinted patterns: (a) patterns after imprinting, (b) residual layer etching if necessary, (c) direct etching of silicon substrate by RIE and polymer removal, (d) lift-off using a chromium layer, and (e) etching of silicon substrate by RIE and chromium etching.
300 nm pitch grating just after imprinting and after lift-off of a 20-nm-thick chromium layer.
200 nm period lines after imprint and lift-off without etching any residual layer. The left image represents the mold, and the right image represents the results after imprinting and lift-off.
Article metrics loading...
Full text loading...