AFM images of structure with and (a); with subsequent growth of 8 ML Ge (b). Scan size is .
Evolution of Ge island size with ( is the Ge concentration of the template layer). Ge deposited thickness is 7 ML.
Cross-sectional TEM images of capped island for 7 ML with (a) and (b) .
Raman spectra of Ge structures with (a) , (b) , and (c) .
PL spectra of Ge structures under excitation power and .
(a) PL spectra of Ge structures with (A), (B), and (C) under excitation power and . (b) Evolution of the full width at half-maximum of with .
Power dependence of (a) peak energy and (b) integrated PL intensity for Ge structure at .
Temperature dependence of PL spectra for Ge under excitation power . (a) in the range ; (b) in the range .
Lateral base length and height of uncapped island and capped island with concentration of Ge varying from 30% to 50%.
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