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Hydrogen silsesquioxane as a high resolution negative-tone resist for extreme ultraviolet lithography
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10.1116/1.1849213
/content/avs/journal/jvstb/23/1/10.1116/1.1849213
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/1/10.1116/1.1849213

Figures

Image of FIG. 1.
FIG. 1.

Photoresist response curves for (a) HSQ and (b) PMMA in terms of the normalized residual thickness as a function of dose.

Image of FIG. 2.
FIG. 2.

Top-down SEM images of 1:1 dense lines resolved in thin films of HSQ (a), (b), and (c) and PMMA (d) and (e). The features were patterned in HSQ films and PMMA films.

Image of FIG. 3.
FIG. 3.

Cross-section SEM image of pitch 1:1 dense lines resolved in thick HSQ film.

Image of FIG. 4.
FIG. 4.

Line edge roughness analysis of a top-down SEM image of pitch 1:1 line:space patterned in HSQ. The solid lines represent the extracted line edge of the patterns that was fitted by average values represented by the dashed lines.

Tables

Generic image for table
TABLE I.

Photoresist processing conditions.

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TABLE II.

Comparison of dissolution parameters of photoresists upon exposure to EUV lithography.

Generic image for table
TABLE III.

Comparison of line edge roughness, linewidth, and linewidth fluctuation of patterned HSQ to that of patterned PMMA over a range of critical dimensions.

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/content/avs/journal/jvstb/23/1/10.1116/1.1849213
2005-01-05
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hydrogen silsesquioxane as a high resolution negative-tone resist for extreme ultraviolet lithography
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/1/10.1116/1.1849213
10.1116/1.1849213
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