Photoresist response curves for (a) HSQ and (b) PMMA in terms of the normalized residual thickness as a function of dose.
Top-down SEM images of 1:1 dense lines resolved in thin films of HSQ (a), (b), and (c) and PMMA (d) and (e). The features were patterned in HSQ films and PMMA films.
Cross-section SEM image of pitch 1:1 dense lines resolved in thick HSQ film.
Line edge roughness analysis of a top-down SEM image of pitch 1:1 line:space patterned in HSQ. The solid lines represent the extracted line edge of the patterns that was fitted by average values represented by the dashed lines.
Photoresist processing conditions.
Comparison of dissolution parameters of photoresists upon exposure to EUV lithography.
Comparison of line edge roughness, linewidth, and linewidth fluctuation of patterned HSQ to that of patterned PMMA over a range of critical dimensions.
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