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Effect of Ti interlayer on the growth of carbon nanotubes on Si by microwave-heated chemical vapor deposition
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10.1116/1.1861032
/content/avs/journal/jvstb/23/2/10.1116/1.1861032
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/2/10.1116/1.1861032
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SEM images of the CNT films grown on 16 nm Ti coated Si: (a)–(d) at for 30 min with 6, 9, 11, and 16 nm thick Ni, respectively, and (e)–(f) at for 17 min with 9 and 16 nm thick Ni, respectively.

Image of FIG. 2.
FIG. 2.

(a) Raman spectra and (b) field emission plots of the CNT films shown in Figs. 1(a)–1(d). For a comparison, the field emission for the CNT film shown in Fig. 1(f) is also shown in Fig. 2(b).

Image of FIG. 3.
FIG. 3.

SEM images of the CNT films grown on 22 nm Ti coated Si: (a)–(d) at for 40 min with 13, 19, 28, and 30 nm thick Co, respectively, (e) at for 45 min with 30 nm Co, and (f) at for 15 min with 28 nm Co.

Image of FIG. 4.
FIG. 4.

(a) Raman spectra and (b) field emission J-E plots of the CNT films shown in Figs. 3(a)–3(d).

Image of FIG. 5.
FIG. 5.

SEM images of the CNT films grown on 16-nm Ti coated Si: (a)–(d) at for 45 min with 9, 12, 17, and 21 nm thick Pd, respectively, and (e)–(f) at for 16 min with 12 and 21 nm thick Pd, respectively.

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/content/avs/journal/jvstb/23/2/10.1116/1.1861032
2005-04-07
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of Ti interlayer on the growth of carbon nanotubes on Si by microwave-heated chemical vapor deposition
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/2/10.1116/1.1861032
10.1116/1.1861032
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