SIMS measurement of carbon, oxygen, and aluminum in a laser structure. Both carbon and oxygen are seen to increase in the QW (depth ).
Peak PL intensity as a function of annealing temperature for (a) a GaInNAsSb QW surrounded by GaAs barriers and (b) a GaNAs layer surrounded by GaAs barriers. The product of the two is qualitatively the same as that of a GaInNAsSb QW surrounded by GaNAs barriers.
A comparison of peak PL intensity as a function of annealing temperature, for several QW samples grown with different plasma damage reduction techniques.
CW and wallplug efficiency curves for a laser. Inset shows optical spectrum at maximum output power.
Pulsed room temperature curve a device.
Typical growth parameters for materials used in laser and PL growths at . Approximate growth temperature windows for the dilute-nitride materials, over which the peak PL intensity remains of optimal, are given in parentheses.
Article metrics loading...
Full text loading...