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Cross sections for the investigation of the electroluminescence excitation of quantum wells in blue light-emitting diodes with multiquantum barriers
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10.1116/1.1924611
/content/avs/journal/jvstb/23/3/10.1116/1.1924611
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/3/10.1116/1.1924611
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic structure of the blue multiple quantum well light-emitting diodes: (a) with and (b) without multiquantum barriers.

Image of FIG. 2.
FIG. 2.

Current–voltage characteristics for devices with and without multiquantum barriers. The inset shows a plot of vs , with as the intercept, and the series resistance as the slope.

Image of FIG. 3.
FIG. 3.

Temperature-dependent electroluminescence spectra for the samples: (a) with and (b) without multiquantum barriers, at an injection current of .

Image of FIG. 4.
FIG. 4.

Temperature-dependent quantum efficiency as a function of temperature for devices with and without multiquantum barriers.

Image of FIG. 5.
FIG. 5.

Ratio of the trapping cross section to the total cross section as a function of temperature for devices with and without multiquantum barriers.

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/content/avs/journal/jvstb/23/3/10.1116/1.1924611
2005-05-19
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Cross sections for the investigation of the electroluminescence excitation of InGaN∕GaN quantum wells in blue light-emitting diodes with multiquantum barriers
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/3/10.1116/1.1924611
10.1116/1.1924611
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