Schematic diagram of an oxide-confined VCSEL with a buried layer.
SEM photograph of an oxide-confined VCSEL with a buried layer under the bond pad.
Static characteristics measured from a -diam aperture VCSEL with a buried layer. (a) The CW operation for light output power versus drive current for VCSEL at various heat-sink temperatures and the voltage versus drive current measured at a heat-sink temperature of . The inset shows the dependence of the threshold current and maximum light output power on the heat-sink temperature of the VCSEL. (b) The lasing spectra as a function of forward current for the same device.
Light output power as a function of forward current for the VCSELs with and without a buried layer.
Thermal resistance measurements for a -diam aperture VCSEL with and without a buried layer. The lasing wavelength of the fundamental mode dependence on (a) the ambient temperature, and (b) the dissipated input power are shown.
Eye diagrams of a -diam aperture VCSEL with a buried layer operating at (a) with PRBS of and a bias current of , and (b) with PRBS of and a bias current of .
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