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Fabrication and characterization of a planarized vertical-cavity surface-emitting laser by using the silicon oxide
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10.1116/1.1935532
/content/avs/journal/jvstb/23/4/10.1116/1.1935532
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/4/10.1116/1.1935532
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of an oxide-confined VCSEL with a buried layer.

Image of FIG. 2.
FIG. 2.

SEM photograph of an oxide-confined VCSEL with a buried layer under the bond pad.

Image of FIG. 3.
FIG. 3.

Static characteristics measured from a -diam aperture VCSEL with a buried layer. (a) The CW operation for light output power versus drive current for VCSEL at various heat-sink temperatures and the voltage versus drive current measured at a heat-sink temperature of . The inset shows the dependence of the threshold current and maximum light output power on the heat-sink temperature of the VCSEL. (b) The lasing spectra as a function of forward current for the same device.

Image of FIG. 4.
FIG. 4.

Light output power as a function of forward current for the VCSELs with and without a buried layer.

Image of FIG. 5.
FIG. 5.

Thermal resistance measurements for a -diam aperture VCSEL with and without a buried layer. The lasing wavelength of the fundamental mode dependence on (a) the ambient temperature, and (b) the dissipated input power are shown.

Image of FIG. 6.
FIG. 6.

Eye diagrams of a -diam aperture VCSEL with a buried layer operating at (a) with PRBS of and a bias current of , and (b) with PRBS of and a bias current of .

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/content/avs/journal/jvstb/23/4/10.1116/1.1935532
2005-07-20
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication and characterization of a planarized vertical-cavity surface-emitting laser by using the silicon oxide
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/4/10.1116/1.1935532
10.1116/1.1935532
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