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Highly -axis oriented thin AlN films deposited on gold seed layer for FBAR devices
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10.1116/1.1941249
/content/avs/journal/jvstb/23/4/10.1116/1.1941249
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/4/10.1116/1.1941249

Figures

Image of FIG. 1.
FIG. 1.

Micromachined FBAR fabrication process flow: (a) LPCVD low stress membrane, (b) backside patterning and wet etching, (c) bottom electrode deposition and patterning, (d) AlN film reactive sputtering and patterning, (e) Al top electrode deposition and patterning, (f) ICP etching residual silicon.

Image of FIG. 2.
FIG. 2.

XRD patterns of AlN films on Au deposited at different rf powers: (a) 200 W, (b) 300 W, and (c) 400 W.

Image of FIG. 3.
FIG. 3.

XRD patterns of AlN films on Au deposited at different sputtering pressures: (a) 5 mTorr, (b) 7 mTorr, and (c) 9 mTorr.

Image of FIG. 4.
FIG. 4.

Cross-sectional SEM of AlN films on bottom electrode at various rf powers: (a) 300 W, and (b) 400 W.

Image of FIG. 5.
FIG. 5.

AFM surface roughness of AlN film deposited on seed layer at various rf powers: (a) 300 W with axis of 100 nm, and (b) 400 W with axis of 60 nm.

Image of FIG. 6.
FIG. 6.

Thickness of the AlN film is inversely related to the resonant frequency and Al top electrode achieved higher frequency than Au top electrode.

Image of FIG. 7.
FIG. 7.

Relationship between resonant frequency and a variable top electrode thickness with constant thickness of AlN film, Au bottom electrode, and membrane.

Image of FIG. 8.
FIG. 8.

Top view SEM image of fabricated two-port FBAR.

Image of FIG. 9.
FIG. 9.

Experimental results for and of FBAR incorporating AlN films deposited at rf power of 400 W.

Image of FIG. 10.
FIG. 10.

Input impedance vs frequency of the fabricated two-port AlN FBAR.

Image of FIG. 11.
FIG. 11.

Phase response of the fabricated two-port AlN FBAR.

Tables

Generic image for table
TABLE I.

Parameters used for sputtering AlN and Al thin films.

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/content/avs/journal/jvstb/23/4/10.1116/1.1941249
2005-07-20
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Highly c-axis oriented thin AlN films deposited on gold seed layer for FBAR devices
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/4/10.1116/1.1941249
10.1116/1.1941249
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