Highly -axis oriented thin AlN films deposited on gold seed layer for FBAR devices
Micromachined FBAR fabrication process flow: (a) LPCVD low stress membrane, (b) backside patterning and wet etching, (c) bottom electrode deposition and patterning, (d) AlN film reactive sputtering and patterning, (e) Al top electrode deposition and patterning, (f) ICP etching residual silicon.
XRD patterns of AlN films on Au deposited at different rf powers: (a) 200 W, (b) 300 W, and (c) 400 W.
XRD patterns of AlN films on Au deposited at different sputtering pressures: (a) 5 mTorr, (b) 7 mTorr, and (c) 9 mTorr.
Cross-sectional SEM of AlN films on bottom electrode at various rf powers: (a) 300 W, and (b) 400 W.
AFM surface roughness of AlN film deposited on seed layer at various rf powers: (a) 300 W with axis of 100 nm, and (b) 400 W with axis of 60 nm.
Thickness of the AlN film is inversely related to the resonant frequency and Al top electrode achieved higher frequency than Au top electrode.
Relationship between resonant frequency and a variable top electrode thickness with constant thickness of AlN film, Au bottom electrode, and membrane.
Top view SEM image of fabricated two-port FBAR.
Experimental results for and of FBAR incorporating AlN films deposited at rf power of 400 W.
Input impedance vs frequency of the fabricated two-port AlN FBAR.
Phase response of the fabricated two-port AlN FBAR.
Parameters used for sputtering AlN and Al thin films.
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