Electronic and magnetotransport properties of ferromagnetic -(In,Mn)As∕-InAs heterojunctions
Current density-voltage characteristics for an ∕InAs junction at 78 and 294 K.
Forward bias characteristics of an ∕InAs junction at 78 K (a). The ideality factor as a function of voltage, calculated after subtracting the linear leakage current from the characteristics, is shown in (b).
Ideality factor as a function of voltage for an ∕InAs junction at varying temperatures.
Longitudinal magnetoresistance (%) as a function of voltage for an ∕InAs junction at 78, 180, and 295 K.
Magnetic field dependence of the percent magnetoresistance (a) in the low bias, leakage regime and (b) in the high bias (0.335 V), diffusion regime for an ∕InAs junction at 78 K. The solid line in (a) shows the dependence, while the solid line in (b) shows the linear magnetic field dependence.
Longitudinal magnetoresistance (%) as a function of voltage for a nonmagnetic -InAs∕ -InAs junction (circles), -InAs substrate (triangles), and InMnAs film (diamonds) at 78 K.
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