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Electronic and magnetotransport properties of ferromagnetic -(In,Mn)As∕-InAs heterojunctions
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10.1116/1.1942506
/content/avs/journal/jvstb/23/4/10.1116/1.1942506
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/4/10.1116/1.1942506
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Current density-voltage characteristics for an ∕InAs junction at 78 and 294 K.

Image of FIG. 2.
FIG. 2.

Forward bias characteristics of an ∕InAs junction at 78 K (a). The ideality factor as a function of voltage, calculated after subtracting the linear leakage current from the characteristics, is shown in (b).

Image of FIG. 3.
FIG. 3.

Ideality factor as a function of voltage for an ∕InAs junction at varying temperatures.

Image of FIG. 4.
FIG. 4.

Longitudinal magnetoresistance (%) as a function of voltage for an ∕InAs junction at 78, 180, and 295 K.

Image of FIG. 5.
FIG. 5.

Magnetic field dependence of the percent magnetoresistance (a) in the low bias, leakage regime and (b) in the high bias (0.335 V), diffusion regime for an ∕InAs junction at 78 K. The solid line in (a) shows the dependence, while the solid line in (b) shows the linear magnetic field dependence.

Image of FIG. 6.
FIG. 6.

Longitudinal magnetoresistance (%) as a function of voltage for a nonmagnetic -InAs∕ -InAs junction (circles), -InAs substrate (triangles), and InMnAs film (diamonds) at 78 K.

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/content/avs/journal/jvstb/23/4/10.1116/1.1942506
2005-07-25
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electronic and magnetotransport properties of ferromagnetic p-(In,Mn)As∕n-InAs heterojunctions
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/4/10.1116/1.1942506
10.1116/1.1942506
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