Control on self-organization of InGaAs/GaAs(100) quantum-dot chains
Sketch of one typical layered structure for samples imaged by AFM or STM in this work.
AFM images of InGaAs multiple layers spaced by 60 ML GaAs. The InGaAs layer is 6.0 ML in (a), 7.6 ML in (b), and 11.5 ML in (c), respectively.
AFM images of 10.0 ML multiple layers spaced by 70 ML GaAs. Different spatial scales are shown (a) and (b).
STM images of 5.8 ML multiple layers. (a) and (b) are for a 56 ML GaAs spacer grown at 580 and 540 °C, respectively. (c) and (d) are for a 84 and 112 ML GaAs spacer, respectively.
AFM images of 10.0 ML multiple layers. The layered structure of the sample imaged in (a) is sketched in Fig. 1. The thickness of inseted for the sample imaged in (b) is 90 ML.
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