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Control on self-organization of InGaAs/GaAs(100) quantum-dot chains
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10.1116/1.1942509
/content/avs/journal/jvstb/23/4/10.1116/1.1942509
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/4/10.1116/1.1942509
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Sketch of one typical layered structure for samples imaged by AFM or STM in this work.

Image of FIG. 2.
FIG. 2.

AFM images of InGaAs multiple layers spaced by 60 ML GaAs. The InGaAs layer is 6.0 ML in (a), 7.6 ML in (b), and 11.5 ML in (c), respectively.

Image of FIG. 3.
FIG. 3.

AFM images of 10.0 ML multiple layers spaced by 70 ML GaAs. Different spatial scales are shown (a) and (b).

Image of FIG. 4.
FIG. 4.

STM images of 5.8 ML multiple layers. (a) and (b) are for a 56 ML GaAs spacer grown at 580 and 540 °C, respectively. (c) and (d) are for a 84 and 112 ML GaAs spacer, respectively.

Image of FIG. 5.
FIG. 5.

AFM images of 10.0 ML multiple layers. The layered structure of the sample imaged in (a) is sketched in Fig. 1. The thickness of inseted for the sample imaged in (b) is 90 ML.

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/content/avs/journal/jvstb/23/4/10.1116/1.1942509
2005-07-25
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Control on self-organization of InGaAs/GaAs(100) quantum-dot chains
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/4/10.1116/1.1942509
10.1116/1.1942509
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