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Ordering of quantum dot molecules by self-organization
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10.1116/1.1942510
/content/avs/journal/jvstb/23/4/10.1116/1.1942510
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/4/10.1116/1.1942510
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Figures

Image of FIG. 1.
FIG. 1.

AFM images of 3.2 nm (In,Ga)As on the (a) 1-, (b) 5-, (c) 10-, and (d) 15- period SL templates. The scan field is and the black-to-white height contrast is 15 nm for all images.

Image of FIG. 2.
FIG. 2.

(a), (b) AFM images of the 0.7 nm GaAs cap layer after annealing and of the subsequent 5.5 nm GaAs spacer layer of the 11th SL period. (c) AFM image of 3.2 nm (In,Ga)As on the 10-period SL template, where the growth temperature of the (In,Ga)As layers and thin GaAs cap layers is increased to 550 °C, and the temperature for annealing and GaAs spacer layer growth to 610 °C. The scan field is for all images and the black-to-white height contrast is 4 nm for (a) and (b), and 15 nm for (c).

Image of FIG. 3.
FIG. 3.

AFM images of the InAs QDs grown at (a) 500 °C, (b) 470 °C, (c) 450 °C, and (d) 520 °C on the ten-period SL template. The scan field is for all images and the black-to-white height contrast is 10 nm for (a)–(c) and 20 nm for (d).

Image of FIG. 4.
FIG. 4.

AFM images of the InAs QDs grown at 470 °C on the ten-period SL template with (In,Ga)As layers of (a) 37% (3.2 nm), (b) 29% (4.0 nm), (c) 37% (4.0 nm), (d) 45% (3.0 nm), and (e) 25% (5.0 nm) In composition and thickness. The scan field is and the black-to-white height contrast is 15 nm for all images.

Image of FIG. 5.
FIG. 5.

AFM images of InAs grown at 470 °C on the ten-period SL template with Al-containing GaAs spacer layers. (a) InAs QDs directly grown on 2 MLs AlAs on the SL template. The black-to-white height contrast is 5 nm. (b) InAs grown on the SL template with 2 MLs AlAs covered by 1.0 nm GaAs underneath each (In,Ga)As layer in the SL template and the InAs layer on top. The black-to-white height contrast is 10 nm. (c) InAs grown on the SL template with 2 MLs AlAs on each thin GaAs cap layer after annealing. The black-to-white height contrast is 10 nm. (d) InAs grown on the SL template with spacer layers. The black-to-white height contrast is 20 nm. The total spacer layer thickness in the SL template is 5.5 nm for all samples. The scan field is for all images.

Image of FIG. 6.
FIG. 6.

AFM images of the InAs QD molecules grown at 470 °C on the ten-period SL template with upper GaAs separation layer thickness of (a) 5.5, (b) 15, and (c) 20 nm. In (d) the growth temperature of the (In,Ga)As and thin GaAs cap layers in the ten-period SL template with 15 nm upper GaAs separation layer thickness is increased to 520 °C. The scan field is and the black-to-white height contrast is 10 nm for all images.

Image of FIG. 7.
FIG. 7.

XRD spectra recorded in the vicinity of the symmetric (311) reflection of the ten-period SL template of Fig. 1(c) without the upper (In,Ga)As layer with the x-ray beam 45° off (solid line) and along (dashed line) [0-11]. Inset: AFM two-dimensional fast-Fourier transform analysis of the InAs QD molecules on the ten-period SL template.

Image of FIG. 8.
FIG. 8.

AFM images of the InAs QDs grown at 500 °C on the ten-period SL template with growth temperature of 530 °C of the (In,Ga)As and thin GaAs cap layers, and 610 °C for annealing and the GaAs spacer layers. (a) InAs QDs without and (b) with additional InAs QD layers, thin GaAs capped and annealed, on the SL template with a 15 nm upper GaAs separation layer and overgrown by 15 nm GaAs. The scan field is and the black-to-white height contrast is 20 nm for both images.

Image of FIG. 9.
FIG. 9.

PL spectra taken at 5 K (solid line) and RT (dotted line) of the capped InAs QD molecules grown at 470 °C on the ten-period SL template with 15 nm upper GaAs separation layer.

Image of FIG. 10.
FIG. 10.

Temperature dependence of (a) the full width at half maximum (FWHM) and (b) the PL peak position of the capped InAs QD molecules of Fig. 6(b) (solid triangles), the capped (In,Ga)As QDs of Fig. 1(c) (solid circles), and the ten-period SL template of Fig. 1(c) without the upper(In,Ga)As layer (solid squares).

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/content/avs/journal/jvstb/23/4/10.1116/1.1942510
2005-07-25
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ordering of quantum dot molecules by self-organization
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/4/10.1116/1.1942510
10.1116/1.1942510
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