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Effect of AlN nucleation layer growth conditions on buffer leakage in high electron mobility transistors grown by molecular beam epitaxy (MBE)
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10.1116/1.1943443
/content/avs/journal/jvstb/23/4/10.1116/1.1943443
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/4/10.1116/1.1943443
/content/avs/journal/jvstb/23/4/10.1116/1.1943443
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/content/avs/journal/jvstb/23/4/10.1116/1.1943443
2005-07-21
2015-03-06
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN∕GaN high electron mobility transistors grown by molecular beam epitaxy (MBE)
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/4/10.1116/1.1943443
10.1116/1.1943443
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