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Effects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy
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10.1116/1.1943446
/content/avs/journal/jvstb/23/4/10.1116/1.1943446
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/4/10.1116/1.1943446
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Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional structures of QWR samples grown on (a) (001) and (b) (111)B GaAs substrates. (c) Reference QW sample grown on planar substrate.

Image of FIG. 2.
FIG. 2.

Cross-sectional SEM images of selectively grown GaAs QWRs on (a) (001) and (b) (111)B substrates.

Image of FIG. 3.
FIG. 3.

Thickness of anodic oxide as a function of anodization voltage.

Image of FIG. 4.
FIG. 4.

(a) PL spectra from a (001) QWR sample, (b) those from a (111)B QWR sample, and (c) those from a reference QW sample on (111) B substrate.

Image of FIG. 5.
FIG. 5.

(a)–(c) SEM images and CL data from the (001) QWR sample and (d)–(f) SEM images and CL data from the (111) B QWR sample.

Image of FIG. 6.
FIG. 6.

Normalized PL intensities from various QWR samples and a reference QW sample as a function of the top AlGaAs barrier thickness, .

Image of FIG. 7.
FIG. 7.

Schematic cross sections of (a) (001) QWR, (b) (111)B QWR, and (c) a simple model for analysis of their PL response.

Image of FIG. 8.
FIG. 8.

(a) XPS spectra from a planar (111)B GaAs surface before and after Si growth and (b) surface Fermi level position before and after Si growth determined from XPS peak positions.

Image of FIG. 9.
FIG. 9.

PL spectra before and after Si-ICL passivation (a) for a (001) QWR sample and (b) for a (111)B QWR sample.

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/content/avs/journal/jvstb/23/4/10.1116/1.1943446
2005-07-25
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/4/10.1116/1.1943446
10.1116/1.1943446
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