Effects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy
Cross-sectional structures of QWR samples grown on (a) (001) and (b) (111)B GaAs substrates. (c) Reference QW sample grown on planar substrate.
Cross-sectional SEM images of selectively grown GaAs QWRs on (a) (001) and (b) (111)B substrates.
Thickness of anodic oxide as a function of anodization voltage.
(a) PL spectra from a (001) QWR sample, (b) those from a (111)B QWR sample, and (c) those from a reference QW sample on (111) B substrate.
(a)–(c) SEM images and CL data from the (001) QWR sample and (d)–(f) SEM images and CL data from the (111) B QWR sample.
Normalized PL intensities from various QWR samples and a reference QW sample as a function of the top AlGaAs barrier thickness, .
Schematic cross sections of (a) (001) QWR, (b) (111)B QWR, and (c) a simple model for analysis of their PL response.
(a) XPS spectra from a planar (111)B GaAs surface before and after Si growth and (b) surface Fermi level position before and after Si growth determined from XPS peak positions.
PL spectra before and after Si-ICL passivation (a) for a (001) QWR sample and (b) for a (111)B QWR sample.
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