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Imaging of thickness and compositional fluctuations in quantum wells by scanning capacitance microscopy
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10.1116/1.1947799
/content/avs/journal/jvstb/23/4/10.1116/1.1947799
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/4/10.1116/1.1947799
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic diagram of a representative quantum-well structure showing contact and scanning probe measurement geometry.

Image of FIG. 2.
FIG. 2.

Numerically simulated capacitance-voltage spectrum for a quantum-well structure.

Image of FIG. 3.
FIG. 3.

Simulated capacitance-voltage spectra for (a) quantum well with thicknesses of plus or minus one monolayer in reverse bias, (b) quantum well with 25%, 30%, and 35% In concentration in reverse bias, (c) quantum well with 10%, 15%, and 20% In concentration in forward bias, and (d) quantum well with thickness of plus or minus one monolayer in forward bias.

Image of FIG. 4.
FIG. 4.

(a) Topographic image and (b–d) scanning capacitance images of the quantum-well structure. Features corresponding to monolayer fluctuations in quantum-well thickness are apparent under reverse bias, but absent, as expected, under forward bias.

Image of FIG. 5.
FIG. 5.

(a) Topographic image and (b–d) scanning capacitance images of the quantum-well structure. Bias voltages are indicated for each SCM image. Data scale is for (b), (c), and for (d). (e) SCM signal spectra extracted from images obtained at different bias voltages at points labeled A, B, and C in (d). (f) Representative single SCM signal spectrum. (g) Computed capacitance-voltage spectra for quantum-well structures with In concentrations of 10%, 20%, and 30%.

Image of FIG. 6.
FIG. 6.

Room-temperature photoluminescence spectra for nominally identical quantum-well structures grown under conditions leading to formation of In-rich clusters (“improved”) and under conditions for which such clusters are absent (“baseline”).

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/content/avs/journal/jvstb/23/4/10.1116/1.1947799
2005-07-25
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Imaging of thickness and compositional fluctuations in InGaN∕GaN quantum wells by scanning capacitance microscopy
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/4/10.1116/1.1947799
10.1116/1.1947799
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