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Effects of doping profile and post-growth annealing on spin injection from Fe into (Al,Ga)As heterostructures
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10.1116/1.1949214
/content/avs/journal/jvstb/23/4/10.1116/1.1949214
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/4/10.1116/1.1949214
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic of the spin LED structure; (b) optical micrograph of a processed LED device.

Image of FIG. 2.
FIG. 2.

(a) Magnetic field dependence of the electroluminescence polarization from spin LEDs with different interfacial doping levels, as indicated . The bias conditions are 14.1, 22.6, and for the samples with 3, 5, and interfacial doping, respectively; (b) bias dependence of the electroluminescence at for spin LEDs with different interfacial doping levels, as indicated .

Image of FIG. 3.
FIG. 3.

Maximum electroluminescence polarization as a function of interfacial doping level for as-grown samples and after annealing at 250 °C for 1 h. The dotted line indicates the typical background signal due to magnetoabsorption in the Fe layer.

Image of FIG. 4.
FIG. 4.

(a) Current–voltage characteristics of an Schottky contact as-grown (solid line) and after annealing at 250 °C (dashed line); (b),(c) differential conductance spectra of the same sample. All measurements .

Image of FIG. 5.
FIG. 5.

(a) Magnetic field dependence of the electroluminescence polarization from spin LEDs after post growth annealing at different temperatures, as indicated ; (b) bias dependence of the electroluminescence at for spin LEDs after post growth annealing at different temperatures, as indicated .

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/content/avs/journal/jvstb/23/4/10.1116/1.1949214
2005-07-25
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of doping profile and post-growth annealing on spin injection from Fe into (Al,Ga)As heterostructures
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/4/10.1116/1.1949214
10.1116/1.1949214
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