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Fabrication and mechanism of relaxed SiGe-on-insulator by modified Ge condensation
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10.1116/1.1978900
/content/avs/journal/jvstb/23/4/10.1116/1.1978900
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/4/10.1116/1.1978900
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Fabrication flow of SGOI beginning with the sandwich structure.

Image of FIG. 2.
FIG. 2.

Elemental depth profiles acquired by SIMS from the SGOI substrate with a surface oxide.

Image of FIG. 3.
FIG. 3.

Spreading resistance profiles acquired from the sample after oxidation and annealing. The inset is magnified.

Image of FIG. 4.
FIG. 4.

High resolution XPS spectra of the SGOI substrate with the top oxide after various sputtering cycles (time): (a) and (b) .

Image of FIG. 5.
FIG. 5.

(a) Cross-sectional TEM images of the sample after oxidation and annealing; (b) high resolution TEM micrograph of the top interface; (c) high resolution TEM micrograph of the SiGe layer; (d) high resolution TEM micrograph of the SiGe/BOX; (e) lateral Ge concentration profile across the layers obtained by EDS.

Image of FIG. 6.
FIG. 6.

AFM image of the SGOI layer surface (with HF etching). The root-mean-square roughness is estimated to be .

Image of FIG. 7.
FIG. 7.

Raman spectra for the SGOI substrate. The peaks are assigned to be Si–Si mode in the Si substrate (a), Si–Si mode in the SiGe layer (b), and Si–Ge mode (c) in the SiGe layer, respectively. The inset shows an enlarged view around the Si–Ge mode in the SiGe layer, indicating the peak shift of peak .

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/content/avs/journal/jvstb/23/4/10.1116/1.1978900
2005-07-22
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication and mechanism of relaxed SiGe-on-insulator by modified Ge condensation
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/4/10.1116/1.1978900
10.1116/1.1978900
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