Fabrication flow of SGOI beginning with the sandwich structure.
Elemental depth profiles acquired by SIMS from the SGOI substrate with a surface oxide.
Spreading resistance profiles acquired from the sample after oxidation and annealing. The inset is magnified.
High resolution XPS spectra of the SGOI substrate with the top oxide after various sputtering cycles (time): (a) and (b) .
(a) Cross-sectional TEM images of the sample after oxidation and annealing; (b) high resolution TEM micrograph of the top interface; (c) high resolution TEM micrograph of the SiGe layer; (d) high resolution TEM micrograph of the SiGe/BOX; (e) lateral Ge concentration profile across the layers obtained by EDS.
AFM image of the SGOI layer surface (with HF etching). The root-mean-square roughness is estimated to be .
Raman spectra for the SGOI substrate. The peaks are assigned to be Si–Si mode in the Si substrate (a), Si–Si mode in the SiGe layer (b), and Si–Ge mode (c) in the SiGe layer, respectively. The inset shows an enlarged view around the Si–Ge mode in the SiGe layer, indicating the peak shift of peak .
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