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Optimization of an inductively coupled plasma etching process of based material for photonic band gap applicationsa)
a)No proof corrections received from author prior to publication.
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10.1116/1.1993617
/content/avs/journal/jvstb/23/4/10.1116/1.1993617
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/4/10.1116/1.1993617
/content/avs/journal/jvstb/23/4/10.1116/1.1993617
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/content/avs/journal/jvstb/23/4/10.1116/1.1993617
2005-07-20
2014-07-11
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optimization of an inductively coupled plasma etching process of GaInP∕GaAs based material for photonic band gap applicationsa)
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/4/10.1116/1.1993617
10.1116/1.1993617
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