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Optimization of an inductively coupled plasma etching process of based material for photonic band gap applicationsa)
a)No proof corrections received from author prior to publication.
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View: Figures


Image of FIG. 1.
FIG. 1.

Nominal wafer structure, index profile, and respective modal waveguide (TE polarization).

Image of FIG. 2.
FIG. 2.

Etch rate (nm/min) of GaInP and as a function of applied platen rf power.

Image of FIG. 3.
FIG. 3.

SEM pictures of a ridge waveguide etched with the platen power at (a) and (b). The coil power in both cases is . The important characteristics observed in (a) are the undercut in the GaAs corelayer (zone A) and the deep trenching at the end of etch (zone B).

Image of FIG. 4.
FIG. 4.

Etch rate (nm/min) and as a function of applied coil power.

Image of FIG. 5.
FIG. 5.

SEM pictures for the etched ridge waveguides with varied over (a) , (b) , and (c) , respectively. The platen power is fixed at . The etch profile shows a transition between an etch foot and a trench with coil power variation.

Image of FIG. 6.
FIG. 6.

SEM picture of the photonic crystal waveguide between the two arrays two of holes in the layer after plasma etching.

Image of FIG. 7.
FIG. 7.

SEM picture of the cross section of the photonic crystal in the material.

Image of FIG. 8.
FIG. 8.

SEM picture of the complete device with ridge (bottom and top), PBG (center) waveguide.


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Scitation: Optimization of an inductively coupled plasma etching process of GaInP∕GaAs based material for photonic band gap applicationsa)