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Epitaxial growth of on (001)Si inside nanoscale contact holes prepared by atomic force microscope tip-induced local oxidation of the thin layer
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10.1116/1.2000967
/content/avs/journal/jvstb/23/5/10.1116/1.2000967
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/5/10.1116/1.2000967
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagrams of sample preparation.

Image of FIG. 2.
FIG. 2.

(a) AFM image of 50 nm openings and (b) the depth profile of one of the openings.

Image of FIG. 3.
FIG. 3.

Relation between the pulse duration and the diameter of openings.

Image of FIG. 4.
FIG. 4.

Scanning electron microscopy images of epitaxial formed at 650 °C inside (a) 200, (b) 120, (c) 80, and (d) 50 nm openings. The average diameters of the resulting silicides for figures (a), (b), (c), and (d) are 290, 180, 140, and 90 nm, respectively. The unreacted Ni films were removed but the mask layers are still present.

Image of FIG. 5.
FIG. 5.

Bright-field TEM image of the faceted pyramidal structure. Inset is the corresponding selected diffraction patterns obtained along the [001]Si pole.

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/content/avs/journal/jvstb/23/5/10.1116/1.2000967
2005-08-16
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial growth of NiSi2 on (001)Si inside nanoscale contact holes prepared by atomic force microscope tip-induced local oxidation of the thin Si3N4 layer
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/5/10.1116/1.2000967
10.1116/1.2000967
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