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Epitaxial growth of on (001)Si inside nanoscale contact holes prepared by atomic force microscope tip-induced local oxidation of the thin layer
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10.1116/1.2000967
/content/avs/journal/jvstb/23/5/10.1116/1.2000967
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/5/10.1116/1.2000967
/content/avs/journal/jvstb/23/5/10.1116/1.2000967
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/content/avs/journal/jvstb/23/5/10.1116/1.2000967
2005-08-16
2014-07-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial growth of NiSi2 on (001)Si inside nanoscale contact holes prepared by atomic force microscope tip-induced local oxidation of the thin Si3N4 layer
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/5/10.1116/1.2000967
10.1116/1.2000967
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