Epitaxial growth of on (001)Si inside nanoscale contact holes prepared by atomic force microscope tip-induced local oxidation of the thin layer
Schematic diagrams of sample preparation.
(a) AFM image of 50 nm openings and (b) the depth profile of one of the openings.
Relation between the pulse duration and the diameter of openings.
Scanning electron microscopy images of epitaxial formed at 650 °C inside (a) 200, (b) 120, (c) 80, and (d) 50 nm openings. The average diameters of the resulting silicides for figures (a), (b), (c), and (d) are 290, 180, 140, and 90 nm, respectively. The unreacted Ni films were removed but the mask layers are still present.
Bright-field TEM image of the faceted pyramidal structure. Inset is the corresponding selected diffraction patterns obtained along the Si pole.
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