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Real-time material quality prediction, fault detection, and contamination control in high electron mobility transistor metalorganic chemical vapor deposition process using in situ chemical sensing
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10.1116/1.2006110
/content/avs/journal/jvstb/23/5/10.1116/1.2006110
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/5/10.1116/1.2006110
/content/avs/journal/jvstb/23/5/10.1116/1.2006110
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/content/avs/journal/jvstb/23/5/10.1116/1.2006110
2005-08-15
2014-12-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Real-time material quality prediction, fault detection, and contamination control in AlGaN∕GaN high electron mobility transistor metalorganic chemical vapor deposition process using in situ chemical sensing
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/5/10.1116/1.2006110
10.1116/1.2006110
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