Illustration of the pattern for writing 100 parallel lines and compensation rectangles at each end of the lines (not to scale).
Exposure vs distance curve caused by one single-line writing. The distance is measured from the center of the line. Open circles are the experimental data. The solid line is the result of double-Gaussian fit.
SEM pictures of the 100-line array with 500 nm period. (a), (b), (c) The pictures of the left end, middle, and the right end of the line array of a sample with both compensation rectangles written. (d), (e), (f) The pictures of the corresponding parts of the line array of a sample with only right compensation rectangle written.
SEM pictures of the 100-line array with 250 nm period. (a) The middle part, (b) the right end of the line array. A compensation rectangle has been written by the right end.
Doses of lines and compensation rectangles for 100-line array patterns.
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