Fabrication of identical sub-100 nm closely spaced parallel lines using electron beam lithography
Illustration of the pattern for writing 100 parallel lines and compensation rectangles at each end of the lines (not to scale).
Exposure vs distance curve caused by one single-line writing. The distance is measured from the center of the line. Open circles are the experimental data. The solid line is the result of double-Gaussian fit.
SEM pictures of the 100-line array with 500 nm period. (a), (b), (c) The pictures of the left end, middle, and the right end of the line array of a sample with both compensation rectangles written. (d), (e), (f) The pictures of the corresponding parts of the line array of a sample with only right compensation rectangle written.
SEM pictures of the 100-line array with 250 nm period. (a) The middle part, (b) the right end of the line array. A compensation rectangle has been written by the right end.
Doses of lines and compensation rectangles for 100-line array patterns.
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