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Fabrication of identical sub-100 nm closely spaced parallel lines using electron beam lithography
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10.1116/1.2008267
/content/avs/journal/jvstb/23/5/10.1116/1.2008267
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/5/10.1116/1.2008267

Figures

Image of FIG. 1.
FIG. 1.

Illustration of the pattern for writing 100 parallel lines and compensation rectangles at each end of the lines (not to scale).

Image of FIG. 2.
FIG. 2.

Exposure vs distance curve caused by one single-line writing. The distance is measured from the center of the line. Open circles are the experimental data. The solid line is the result of double-Gaussian fit.

Image of FIG. 3.
FIG. 3.

SEM pictures of the 100-line array with 500 nm period. (a), (b), (c) The pictures of the left end, middle, and the right end of the line array of a sample with both compensation rectangles written. (d), (e), (f) The pictures of the corresponding parts of the line array of a sample with only right compensation rectangle written.

Image of FIG. 4.
FIG. 4.

SEM pictures of the 100-line array with 250 nm period. (a) The middle part, (b) the right end of the line array. A compensation rectangle has been written by the right end.

Tables

Generic image for table
TABLE I.

Doses of lines and compensation rectangles for 100-line array patterns.

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/content/avs/journal/jvstb/23/5/10.1116/1.2008267
2005-08-15
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication of identical sub-100 nm closely spaced parallel lines using electron beam lithography
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/5/10.1116/1.2008267
10.1116/1.2008267
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