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Temperature dependence of carrier dynamics for quantum dot infrared photodetectors
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10.1116/1.2008271
/content/avs/journal/jvstb/23/5/10.1116/1.2008271
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/5/10.1116/1.2008271
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM image of 2.4 ML QD deposition.

Image of FIG. 2.
FIG. 2.

-PL spectra of QDIPs, normalized to their ground-state emission peaks, taken at at different excitation power densities: (continuous), (dotted line), (dashed line), and (dash dotted line). The inset shows the emission spectrum from WL.

Image of FIG. 3.
FIG. 3.

Variation of PL spectra at different temperatures. The excitation power density is about . The spectra are vertically offset for clarity.

Image of FIG. 4.
FIG. 4.

45° -incidence detection for QDIPs at different temperatures ranges: (a) 30–90 K and (b) 100–200 K. The weak spectrum at 100 K was plotted with the much stronger spectra at above 110 K in (b) for emphasizing the sudden increase in intensity. Also, the spectra are vertically offset for clarity.

Image of FIG. 5.
FIG. 5.

Comparison of normalized intensity of responsivity and PL spectra at 180 K.

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/content/avs/journal/jvstb/23/5/10.1116/1.2008271
2005-08-16
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature dependence of carrier dynamics for InAs∕GaAs quantum dot infrared photodetectors
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/5/10.1116/1.2008271
10.1116/1.2008271
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