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Study of hydrogen-sensing characteristics of a Pt-oxide-AlGaAs metal-oxide-semiconductor high electron mobility transistor
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10.1116/1.2013314
/content/avs/journal/jvstb/23/5/10.1116/1.2013314
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/5/10.1116/1.2013314

Figures

Image of FIG. 1.
FIG. 1.

Schematic cross section of the studied Pt-oxide- (MOS) high electron mobility transistor (HEMT) hydrogen sensor.

Image of FIG. 2.
FIG. 2.

Common-source output current-voltage characteristics of the studied GaAs-based HEMT under different-concentration hydrogen gases at (a) , (b) , (c) , respectively.

Image of FIG. 3.
FIG. 3.

(a) Transconductance and drain saturation current as a function of gate-source voltage of the studied device under different-concentration hydrogen gases at . The inset shows the corresponding values of threshold voltage shift and peak transconductance variation. (b) The threshold voltage shift and peak transconductance variation versus temperature under /air gas and at the forward bias of .

Image of FIG. 4.
FIG. 4.

Relationship between the drain saturation current sensitivity and hydrogen concentration of the studied device at different temperature.

Image of FIG. 5.
FIG. 5.

Inverse threshold voltage shift vs inverse square root of hydrogen partial pressure of the studied GaAs-based HEMT at different temperature.

Image of FIG. 6.
FIG. 6.

Logarithmic value of equilibrium constant as a function of inverse absolute temperature of the studied device.

Image of FIG. 7.
FIG. 7.

(a) Transient responses of the studied device at the introduction and removal of 14, 98, 980, and /air mixture gases at room temperature. (b) The transient responses of the studied device under /air gas at 30, 72, 112, and . The applied biases are fixed at and .

Tables

Generic image for table
TABLE I.

Transient response properties of the studied device and previously reported AlGaAs-based Schottky diodes under /air gas at .

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/content/avs/journal/jvstb/23/5/10.1116/1.2013314
2005-08-16
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study of hydrogen-sensing characteristics of a Pt-oxide-AlGaAs metal-oxide-semiconductor high electron mobility transistor
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/5/10.1116/1.2013314
10.1116/1.2013314
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