Layer structures and their band diagrams studied in this report: (a) Structures with quaternary InGaAlAs QW barriers used for the study of the impact of substrate temperature on graded buffer growth, and (b) structures with ternary InGaAs QW barriers used for the study of the growth of QW structures above the graded buffers.
Photoluminescence intensities measured at from samples with various substrate temperatures during the growth of the graded buffers.
Surface morphologies of graded buffers grown at various temperatures. The rms roughness and the sectional plot of a surface height are also shown for each sample.
Arsenic fluxes at which an arsenic terminated surface changed to a group III terminated surface, plotted as a function of the indium composition at the top of the graded buffer.
Photoluminescence intensities measured at of single QW structures grown at various substrate temperatures. The graded buffers underneath the QW structures were grown identically at . The plots are shifted both horizontally and vertically with respect to each other to enhance clarity.
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