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Effects of substrate temperature on the growth of InGaAs compositionally graded buffers and on quantum well structures grown above them
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10.1116/1.2052727
/content/avs/journal/jvstb/23/5/10.1116/1.2052727
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/5/10.1116/1.2052727
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Layer structures and their band diagrams studied in this report: (a) Structures with quaternary InGaAlAs QW barriers used for the study of the impact of substrate temperature on graded buffer growth, and (b) structures with ternary InGaAs QW barriers used for the study of the growth of QW structures above the graded buffers.

Image of FIG. 2.
FIG. 2.

Photoluminescence intensities measured at from samples with various substrate temperatures during the growth of the graded buffers.

Image of FIG. 3.
FIG. 3.

Surface morphologies of graded buffers grown at various temperatures. The rms roughness and the sectional plot of a surface height are also shown for each sample.

Image of FIG. 4.
FIG. 4.

Arsenic fluxes at which an arsenic terminated surface changed to a group III terminated surface, plotted as a function of the indium composition at the top of the graded buffer.

Image of FIG. 5.
FIG. 5.

Photoluminescence intensities measured at of single QW structures grown at various substrate temperatures. The graded buffers underneath the QW structures were grown identically at . The plots are shifted both horizontally and vertically with respect to each other to enhance clarity.

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/content/avs/journal/jvstb/23/5/10.1116/1.2052727
2005-09-20
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of substrate temperature on the growth of InGaAs compositionally graded buffers and on quantum well structures grown above them
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/5/10.1116/1.2052727
10.1116/1.2052727
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