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Cross beam lithography and dip pen nanolithography for nanoparticle conductivity measurements
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10.1116/1.2062647
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    Affiliations:
    1 TASC-INFM at ELETTRA-Sincrotrone Trieste, S.S. 14, km 163.5 in Area Science Park, I-34017 Basovizza-Trieste, Italy
    2 Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
    3 TASC-INFM at ELETTRA-Sincrotrone Trieste, S.S.14, km 163.5 in Area Science Park, I-34017 Basovizza-Trieste, Italy
    4 TASC-INFM at ELETTRA-Sincrotrone Trieste, S.S.14, km 163.5 in Area Science Park, I-34017 Basovizza-Trieste, Italy and Department of Applied Physics, Osaka University, Yamadoaka, 2-1, Suita, Osaka 565-0871, Japan
    5 Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
    6 TASC-INFM at ELETTRA-Sincrotrone Trieste, S.S.14, km 163.5 in Area Science Park, I-34017 Basovizza-Trieste, Italy and Università della Magna Graecia, Viale Europa, Campus Germaneto, 88100 Catanzaro, Italy
    a) Author to whom correspondence should be addressed; electronic mail: stefano.cabrini@elettra.trieste.it
    J. Vac. Sci. Technol. B 23, 2806 (2005); http://dx.doi.org/10.1116/1.2062647
/content/avs/journal/jvstb/23/6/10.1116/1.2062647
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/6/10.1116/1.2062647
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SEM images of the gold pattern made by a combination of optical and e-beam lithography.

Image of FIG. 2.
FIG. 2.

SEM images of pattern obtained using different FIB milling time; (a) gaps between using , (b) using and those with a thin gold wire branching the gap (c), using just . All 3 types of gaps were obtained with a good repeatability.

Image of FIG. 3.
FIG. 3.

(a) AFM image of the tips of the structure of Fig. 2(b) showing the narrow gap of about . (b) AFM image (height and phase) of a smaller gap obtained from the samples of Fig. 2(c).

Image of FIG. 4.
FIG. 4.

curves, showing a tenfold increase in conductivity (with respect to the conductivity of the preassembled gap) after assembly of diameter Au nanoparticles coated with hexanethiol (HT) and MUD ligands and mixed with the di-isocyanate molecule; the particles were patterned with dip pen nanolithography. The curves were linear from .

Image of FIG. 5.
FIG. 5.

After the assembly of a diameter Au nanoparticle by DPN, this device showed a 100-fold increase in conductivity with respect to the preassembled gap; the curves shown were taken before and after nanoparticle deposition. Measuring the device again later, almost no change in conductivity was observed, demonstrating a strong, stable covalent bond.

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/content/avs/journal/jvstb/23/6/10.1116/1.2062647
2005-12-02
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Cross beam lithography (FIB+EBL) and dip pen nanolithography for nanoparticle conductivity measurements
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/6/10.1116/1.2062647
10.1116/1.2062647
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