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Enhancement of electroluminescence in GaN-based light-emitting diodes using an efficient current blocking layer
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10.1116/1.2083931
/content/avs/journal/jvstb/23/6/10.1116/1.2083931
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/6/10.1116/1.2083931
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

characteristics of oxidized contacts with thick pad metals before and after annealing at 500 °C for 1 min in ambient.

Image of FIG. 2.
FIG. 2.

SIMS depth profiles of oxidized contacts with thick pad metals (a) before and (b) after annealing at 500 °C for 1 min in ambient.

Image of FIG. 3.
FIG. 3.

(a) Forward and (b) reverse characteristics of LEDs before and after postannealing at 500 °C. The insets are top and side views of a LED chip used in this work.

Image of FIG. 4.
FIG. 4.

(a) Electroluminescence spectra and (b) curves of LEDs before and after postannealing at 500 °C.

Image of FIG. 5.
FIG. 5.

Backside light emission images of functioning LED chips at injection current of 1 mA (a) before and (b) after postannealing at 500 °C. In order to reflect the emitted light to the backside (sapphire-side), thick ohmic contact annealed in was used for the -type electrode.

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/content/avs/journal/jvstb/23/6/10.1116/1.2083931
2005-10-26
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhancement of electroluminescence in GaN-based light-emitting diodes using an efficient current blocking layer
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/6/10.1116/1.2083931
10.1116/1.2083931
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