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Cross-sectional TEM micrograph of the SOI after (a) gallium implantation ; (b) annealing at for . High-resolution images of the implanted region are shown on the left-hand side of each image.
Raman spectrum of the SOI exposed to different dosages of Ga (a) as implanted, (b) annealed at for .
Four-probe characteristics of (a) microchannels implanted with different dosages of Ga (b) nanochannels without implantation (solid line) and after being implanted with of Ga (dashed lines). The devices have been annealed at for . The inset shows the SEM picture of the nanochannel (encircled region along with the probing and the gate electrodes, scale bar is ).
Four-probe of (a) unimplanted nanochannel at different gate bias. The inset shows the variation of the zero biased resistances as a function gate bias. (b) Dependence of zero biased resistances of the two representative implanted nanochannels on gate bias.
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