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Effects of focused gallium ion-beam implantation on properties of nanochannels on silicon-on-insulator substrates
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10.1116/1.2101599
/content/avs/journal/jvstb/23/6/10.1116/1.2101599
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/6/10.1116/1.2101599
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Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional TEM micrograph of the SOI after (a) gallium implantation ; (b) annealing at for . High-resolution images of the implanted region are shown on the left-hand side of each image.

Image of FIG. 2.
FIG. 2.

Raman spectrum of the SOI exposed to different dosages of Ga (a) as implanted, (b) annealed at for .

Image of FIG. 3.
FIG. 3.

Four-probe characteristics of (a) microchannels implanted with different dosages of Ga (b) nanochannels without implantation (solid line) and after being implanted with of Ga (dashed lines). The devices have been annealed at for . The inset shows the SEM picture of the nanochannel (encircled region along with the probing and the gate electrodes, scale bar is ).

Image of FIG. 4.
FIG. 4.

Four-probe of (a) unimplanted nanochannel at different gate bias. The inset shows the variation of the zero biased resistances as a function gate bias. (b) Dependence of zero biased resistances of the two representative implanted nanochannels on gate bias.

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/content/avs/journal/jvstb/23/6/10.1116/1.2101599
2005-10-27
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of focused gallium ion-beam implantation on properties of nanochannels on silicon-on-insulator substrates
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/6/10.1116/1.2101599
10.1116/1.2101599
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