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Passivation effects on the stability of pentacene thin-film transistors with prepared by ion-beam-assisted deposition
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Schematic drawing of IBAD process. (b) Cross section of the device structure and photographic plan view (length , width ).

Image of FIG. 2.
FIG. 2.

(a) Output characteristics of reference OTFT after encapsulation. (b) Degradation of the drain current in the saturation regime when is after 100 days in air.

Image of FIG. 3.
FIG. 3.

Plots of vs and vs for the OTFTs without encapsulation (a) and with encapsulation (b).

Image of FIG. 4.
FIG. 4.

XPS spectra for O peaks obtained from the pentacene thin films before and after exposure to air for 100 days. (Inset: comparison of O peaks from ).

Image of FIG. 5.
FIG. 5.

Property-endurance limit or aging effect with time of our OTFTs in terms of field-effect mobility (a) and on/off current ratio (b).

Image of FIG. 6.
FIG. 6.

(a) XRD results of polycarbonate (PC) as a substrate for reference and thermally evaporated oxide films on PC. (b) WVTR values of the oxides on PC substrates.

Image of FIG. 7.
FIG. 7.

(a) XPS spectra for O peaks of and (left inset) and Sn and spectra (right inset) from the thin film prepared by IBAD. (b) Refractive index and according packing density of the oxides before and after the IBAD process.

Image of FIG. 8.
FIG. 8.

AFM images and section analyses of 50 nm pentacene thin film (a) and 80 nm IBAD encapsulation layer on top of 100 nm buffer layer (b).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Passivation effects on the stability of pentacene thin-film transistors with SnO2 prepared by ion-beam-assisted deposition