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Characterization of bulk GaN rectifiers for hydrogen gas sensing
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10.1116/1.2110343
/content/avs/journal/jvstb/23/6/10.1116/1.2110343
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/6/10.1116/1.2110343
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Optical micrograph of -diam GaN wafer (top) and scanning electron microscopy micrograph of completed diode (bottom).

Image of FIG. 2.
FIG. 2.

Room temperature characteristics in both linear (top) and log (bottom) formats.

Image of FIG. 3.
FIG. 3.

Forward characteristics (top) and forward turn-on voltage (bottom) as a function of measurement temperature.

Image of FIG. 4.
FIG. 4.

Reverse characteristics (top) and breakdown voltage (bottom) as a function of measurement temperature.

Image of FIG. 5.
FIG. 5.

Time dependence of forward current at forward bias of Pd (top) or Pt (bottom) diodes as the measurement ambient is switched from to various concentrations of in and then back to .

Image of FIG. 6.
FIG. 6.

Percentage change in forward current at forward bias of at room temperature as a function of concentration in .

Image of FIG. 7.
FIG. 7.

characteristics at for measurement in or 10% or in .

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/content/avs/journal/jvstb/23/6/10.1116/1.2110343
2005-11-01
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of bulk GaN rectifiers for hydrogen gas sensing
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/6/10.1116/1.2110343
10.1116/1.2110343
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