Optical micrograph of -diam GaN wafer (top) and scanning electron microscopy micrograph of completed diode (bottom).
Room temperature characteristics in both linear (top) and log (bottom) formats.
Forward characteristics (top) and forward turn-on voltage (bottom) as a function of measurement temperature.
Reverse characteristics (top) and breakdown voltage (bottom) as a function of measurement temperature.
Time dependence of forward current at forward bias of Pd (top) or Pt (bottom) diodes as the measurement ambient is switched from to various concentrations of in and then back to .
Percentage change in forward current at forward bias of at room temperature as a function of concentration in .
characteristics at for measurement in or 10% or in .
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