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Nanoscale fabrication in aqueous KOH solution using tribo-nanolithography
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10.1116/1.2126674
/content/avs/journal/jvstb/23/6/10.1116/1.2126674
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/6/10.1116/1.2126674
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of experimental setup based on use of an AFM.

Image of FIG. 2.
FIG. 2.

Process mechanism of structure fabrication by TNL in aqueous KOH solution. (a) Supply KOH solution on a silicon surface and start machining. (b) and (c) Form amorphous layer along the scanning path of the cantilever tip. (d) Fabricate protruding, sloped structures.

Image of FIG. 3.
FIG. 3.

AFM topography image of protruding structures machined in KOH solution (left) and in air (right) after subsequent etching in a 5 mass % KOH solution for . The silicon surface was machined in air, then in 5 mass % KOH, then subsequently etched in the same KOH solution for . The image was recorded using a conventional AFM cantilever for measurements.

Image of FIG. 4.
FIG. 4.

Inclination change of protruding structure at various scanning velocities in -direction . The structures were prepared in 5 mass % KOH at a normal load of and scanning pitch of .

Image of FIG. 5.
FIG. 5.

Inclination change of protruding structure at various scanning pitches. The structures were prepared in 5 mass % KOH at a normal load of and scanning velocity of .

Image of FIG. 6.
FIG. 6.

Inclination change of protruding structure at various normal loads. The structures were prepared in 5 mass % KOH at a normal load of and scanning velocity of .

Image of FIG. 7.
FIG. 7.

Comparison of corrosion resistance of line structures machined in KOH and in air. (a) AFM topography and cross-sectional image of line structures machined in KOH (right) and in air (left). (b) Height change of line structures machined in KOH and in air plotted as a function of etch time. The silicon surface was machined in air, then in 5 mass % KOH, then subsequently etched in the same KOH solution.

Image of FIG. 8.
FIG. 8.

(a) AFM topography image of an array of silicon line structures prepared using TNL in a KOH solution with various machining times from 1 to 5. (b) Height variation of line structures fabricated by various machining times plotted as a function of etch time. The silicon surface was machined in 5 mass % KOH at machining times from 1 to 5, and then etched in the same KOH solution.

Image of FIG. 9.
FIG. 9.

(a) AFM topography image of a three-dimensional structure with multiple inclinations of 0.08° and 0.23°. (b) Cross-sectional topography trace of a line marked in (a). The inclination was controlled by changing the scanning velocity from . The image was recorded using a conventional AFM cantilever for measurements.

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/content/avs/journal/jvstb/23/6/10.1116/1.2126674
2005-11-07
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanoscale fabrication in aqueous KOH solution using tribo-nanolithography
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/6/10.1116/1.2126674
10.1116/1.2126674
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