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Investigation of overlay errors due to the interaction of optical and extreme ultraviolet mask fabrication processes
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10.1116/1.2127949
/content/avs/journal/jvstb/23/6/10.1116/1.2127949
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/6/10.1116/1.2127949

Figures

Image of FIG. 1.
FIG. 1.

Pattern layout utilized in the FE models. There are cells in the pattern area with each unit cell having dimensions of . Dimensions in millimeters except as specified.

Image of FIG. 2.
FIG. 2.

Unit cells of: (a) pattern I for the active-area layer; (b) pattern II for the poly layer; (c) pattern III for the contact layer; (d) pattern IV for the metal layer; and (e) final pattern with all four layers.

Image of FIG. 3.
FIG. 3.

(a) EUV mask process steps and (b) EUV chucking fabrication configuration utilized in the FE simulations (exposure chucking is illustrated).

Image of FIG. 4.
FIG. 4.

(a) Optical mask process steps simulated with the FE models; (b) three-point mount for optical patterning/metrology, and (c) vacuum chuck for optical exposure. All dimensions in millimeters.

Image of FIG. 5.
FIG. 5.

Schematic of the submodeling techniques.

Image of FIG. 6.
FIG. 6.

IPD tracking for: (a) pattern II (poly layer, EUV processing) and (b) pattern IV (metal layer, optical processing). The maximum pattern transfer IPD is for the poly layer. For the metal layer, the maximum IPD is with a three-point mount in the -beam tool and with a flat chuck in the -beam tool. Magnification corrections have not been applied to these values.

Image of FIG. 7.
FIG. 7.

Pattern transfer IPD in the unit cell at corner location for; (a) the poly layer and (b) the metal layer. The maximum IPD is for the poly layer and for the metal layer (with three-point mount in the -beam tool), after magnification corrections. (c) Overlay errors between these two layers with maximum value of in the unit cell at corner location. It should be noted that different scaling was used in these vector plots to illustrate the magnitudes.

Tables

Generic image for table
TABLE I.

Four layers included in the overlay investigation.

Generic image for table
TABLE II.

EUVL and optical mask fabrication parameters utilized in the FE simulations.

Generic image for table
TABLE III.

Pattern transfer IPD of each layer and overlay errors between the four layers.

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/content/avs/journal/jvstb/23/6/10.1116/1.2127949
2005-12-06
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of overlay errors due to the interaction of optical and extreme ultraviolet mask fabrication processes
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/6/10.1116/1.2127949
10.1116/1.2127949
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