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Investigation of surface treatment schemes on n-type GaN and
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10.1116/1.2131078
/content/avs/journal/jvstb/23/6/10.1116/1.2131078
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/6/10.1116/1.2131078
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XPS spectra of photoelectrons for GaN as a function of surface treatment condition. The peak shifts about toward higher binding energy in the sample treated with plasma and wet etched when compared to the as-grown sample.

Image of FIG. 2.
FIG. 2.

XPS spectra of the photoelectrons for the GaN surface treated under the several conditions. The peak shifts about toward higher binding energy in the samples treated with plasma when compared to the as-grown sample.

Image of FIG. 3.
FIG. 3.

XPS spectra of the photoelectrons for the GaN surface treated under several conditions. BOE treatment is the most efficient etchant to remove the native oxide from the surface of GaN as indicated by a reduction in peak intensity.

Image of FIG. 4.
FIG. 4.

Summary of ratio of peak areas in the GaN samples. (1) as-grown, (2) plasma treated, (3) plasma treated and cleaned in , (4) plasma treated and cleaned in HCl, and (5) plasma treated and cleaned in BOE. ratio is minimized in the sample treated in BOE treatment.

Image of FIG. 5.
FIG. 5.

XPS spectra of the photoelectrons for the GaN surface treated with BOE and then exposed to air for various intervals of time.

Image of FIG. 6.
FIG. 6.

Summary of ratio of peak areas in the GaN samples treated in BOE and exposed to air for various intervals of time. (1) As-grown, (2) plasma treated, (3) plasma treated and cleaned in BOE, (4) plasma treated and cleaned in BOE and exposed to air for , and (5) plasma treated and cleaned in BOE and exposed to air for .

Image of FIG. 7.
FIG. 7.

XPS spectra of the photoelectrons for the surface treated under several conditions. The energy shift of peak is about toward higher binding energy in the samples treated with plasma when compared to the as-grown sample.

Image of FIG. 8.
FIG. 8.

XPS spectra of the photoelectrons for the AlGaN surface treated under several conditions. BOE treatment is the most efficient etchant to remove the native oxide from the surface of AlGaN as observed by the reduction in peak intensity.

Image of FIG. 9.
FIG. 9.

Summary of ratio of peak areas in the AlGaN samples (1) as-grown, (2) plasma treated, (3) plasma treated and cleaned in , (4) plasma treated and cleaned in HCl, and (5) plasma treated and cleaned in BOE. ratio is minimized in the sample treated in BOE treatment.

Image of FIG. 10.
FIG. 10.

XPS spectra of the photoelectrons for the AlGaN surface treated with BOE and then exposed to air for various intervals of time.

Image of FIG. 11.
FIG. 11.

Summary of ratio of peak areas in the AlGaN samples treated in BOE and exposed to air for various intervals of time. (1) As-grown, (2) plasma treated, (3) plasma treated and cleaned in BOE, (4) plasma treated and cleaned in BOE and exposed to air for , and (5) plasma treated and cleaned in BOE and exposed to air for .

Image of FIG. 12.
FIG. 12.

AES surface scans of as-grown AlGaN sample (1) and those surfaces treated with plasma at different plasma bias voltages, (2), (3), (4), (5), and (6). plasma treatment causes deposition of Si on the AlGaN surface. The intensity of Si peaks increases slightly with the plasma bias voltage.

Image of FIG. 13.
FIG. 13.

AES surface scans of as-grown AlGaN sample (1) and those surface treated with plasma at plasma bias voltage (2) and then cleaned in (3), HCl (4), BOE (5), (6). After cleaning in BOE, sample 6 was further exposed to ambient air for (6). plasma treatment causes deposition of Si on the AlGaN surface. Cleaning the sample in BOE eliminates the Si from the surface.

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/content/avs/journal/jvstb/23/6/10.1116/1.2131078
2005-11-21
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of surface treatment schemes on n-type GaN and Al0.20Ga0.80N
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/6/10.1116/1.2131078
10.1116/1.2131078
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