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Reactive-ion etching of high- and submicron-diameter micropillar cavities
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View: Figures


Image of FIG. 1.
FIG. 1.

Schematic of the fabrication process used to make micropillars and SEM image of an ensemble of micropillars with diameters ranging from .

Image of FIG. 2.
FIG. 2.

Top: reflected laser intensity and flow rate as a function of time, during the etching of -height pillars. The flow rate is set to , RF power to and pressure to . Bottom: average etch rate of GaAs as a function of flow rate.

Image of FIG. 3.
FIG. 3.

Cross-sectional TEM 002 dark-field image of micropillars (the diameters of the pillars are, respectively, 390, 250, and ) and energy dispersive x-ray microanalysis spectra obtained on the cladding layer of the pillars.

Image of FIG. 4.
FIG. 4.

SEM images of the etched profile of the pillars for different flow rates. (a) High constant rate: The rate of is too high and the etching is completely inhibited, (b) low constant rate: The etched profile is isotropic (this is true only for undoped substrates; for - or -doped substrates, an anisotropic profile can be achieved with a constant flow rate), (c) flow rate ramp that is not steep enough, and (d) flow rate ramp that gives the desired anisotropic profile.

Image of FIG. 5.
FIG. 5.

Spectra of micropillars with diameters ranging from .

Image of FIG. 6.
FIG. 6.

Quality factor of our micropillars as a function of the diameter.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reactive-ion etching of high-Q and submicron-diameter GaAs∕AlAs micropillar cavities