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Proton and anion distribution and line edge roughness of chemically amplified electron beam resist
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10.1116/1.2131875
/content/avs/journal/jvstb/23/6/10.1116/1.2131875
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/6/10.1116/1.2131875
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Scanning pattern of electron beam (top down view).

Image of FIG. 2.
FIG. 2.

Distribution of counter anions around an ionization point. While protons are generated at the ionization points, counter anions are generated through the reactions of acid generators with low-energy electrons generated by ionization events.

Image of FIG. 3.
FIG. 3.

Top down view of proton and counter anion distribution in poly(4-hydroxystyrene) with 10 wt. % TPS-tf generated by the exposure with the dose of (a) , (b) , and (c) . A solid circle and a cross represent a proton and a counter anion, respectively.

Image of FIG. 4.
FIG. 4.

Cross-sectional view of proton and counter anion distribution in poly(4-hydroxystyrene) with 10 wt. % TPS-tf generated by the exposure with the dose of (a) , (b) , and (c) . A solid circle and a cross represent a proton and a counter anion, respectively.

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/content/avs/journal/jvstb/23/6/10.1116/1.2131875
2005-12-01
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Proton and anion distribution and line edge roughness of chemically amplified electron beam resist
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/6/10.1116/1.2131875
10.1116/1.2131875
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