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Ultrathin pore-seal film by plasma enhanced chemical vapor deposition SiCH from tetramethylsilane
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10.1116/1.2132324
/content/avs/journal/jvstb/23/6/10.1116/1.2132324
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/6/10.1116/1.2132324

Figures

Image of FIG. 1.
FIG. 1.

Relationship between ALD-TaN thickness on various PECVD films and the number of deposition cycles.

Image of FIG. 2.
FIG. 2.

Cross sections of Cu trenches by TEM images with various PECVD pore-seal films of (a) without, (b) SiCH, (c) SiOC, and (d) pore-seal, respectively.

Image of FIG. 3.
FIG. 3.

Cross sections of Cu trenches by TEM -contrast with various PECVD pore-seal films of (a) without, (b) SiCH, (c) SiOC, and (d) pore-seal, respectively.

Image of FIG. 4.
FIG. 4.

Cross section of Cu trenches by TEM -contrast images (a) without and (b) with PECVD SiCH pore-sealing, respectively.

Image of FIG. 5.
FIG. 5.

Electrical characteristics of single damascene Cu innterconnects with PECVD SiOC and PECVD SiCH pore-seal. (a) characteristics at of a comb pattern interconnect (, , ). (b) Line resistance of a snake pattern interconnect (, , ).

Tables

Generic image for table
TABLE I.

Contact angle of water, deposition rate, and step coverage for various PECVD pore-seal films.

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/content/avs/journal/jvstb/23/6/10.1116/1.2132324
2005-11-11
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultrathin pore-seal film by plasma enhanced chemical vapor deposition SiCH from tetramethylsilane
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/23/6/10.1116/1.2132324
10.1116/1.2132324
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