Plasma implanted ultra shallow junction boron depth profiles: Effect of plasma chemistry and sheath conditions
Schematic illustration showing the components of a pulse ignited glow discharge system.
Schematic illustration of the ion mass and energy spectrum measurement apparatus used to characterize the pulse ignited plasma implant system.
SIMS depth profiles for a plasma implant and beamline implant using the “no-leak” measurement protocol.
Implanted ion energy measurements for the primary boron ions during the implant pulse of a plasma implant.
Simulated depth profile based on the measured ion mass and energy fractions from Fig. 4 and Table I, compared with the measured SIMS depth profile for the same implant conditions.
Diagram illustrating different pulse timing between the applied wafer bias pulse and the plasma ignition (HC) pulse.
SIMS depth profiles for implants with synchronized pulse timing, wafer bias pulse applied first, and plasma pulse applied first, all implanted with the same plasma implant.
SIMS depth profiles for the reference plasma implant vs the more collisional plasma sheath case using only the wafer bias pulse (for both the raw data and rescaled to match total implant dose with the same).
SIMS depth profiles for both plasma and beamline implants with and without aggressive wet chemical photoresist strip (Piranha).
Ion mass fractions and energy spectrum data from Fig. 4 are converted into equivalent atomic boron ion energies and partitioned into eight energy bins with corresponding dose fractions for the purpose of simulating the implant profile.
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