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Effect of buried interface on dopant and defect evolution in preamorphizing implant ultrashallow junction
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10.1116/1.2140004
/content/avs/journal/jvstb/24/1/10.1116/1.2140004
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/1/10.1116/1.2140004
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Van der Pauw resistivity after isothermal anneals. The solid lines are bulk Si, dotted lines are SOI, triangles represent Ge, and squares represent Ge.

Image of FIG. 2.
FIG. 2.

SIMS profiles for Ge samples in bulk silicon and SOI after (left) and (right) anneals at . The thicker profile corresponds to the SOI.

Image of FIG. 3.
FIG. 3.

Schematic representation of the interstitial flux for the Ge energy implant in both bulk silicon and SOI.

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/content/avs/journal/jvstb/24/1/10.1116/1.2140004
2006-01-26
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of buried Si∕SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junction
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/1/10.1116/1.2140004
10.1116/1.2140004
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