Effect of buried interface on dopant and defect evolution in preamorphizing implant ultrashallow junction
Van der Pauw resistivity after isothermal anneals. The solid lines are bulk Si, dotted lines are SOI, triangles represent Ge, and squares represent Ge.
SIMS profiles for Ge samples in bulk silicon and SOI after (left) and (right) anneals at . The thicker profile corresponds to the SOI.
Schematic representation of the interstitial flux for the Ge energy implant in both bulk silicon and SOI.
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