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Comparison of scanning capacitance microscopy and scanning Kelvin probe microscopy in determining two-dimensional doping profiles of Si homostructures
6.B. G. Rennex, J. J. Kopanski, and J. F. Marchiando, FASTC2D: Software for Extracting 2D Carrier Profiles from Scanning Capacitance Microscopy Image, AIP Conf. Proc. Vol. No. 550 (AIP, Melville, NY, 2001).
8.Scanning Capacitance Microscopy, Support Note No. 224, Rev. B, Digital Instruments Inc., 520 E. Montecito St., Santa Barbara, CA (1996).
9.J. J. Kopanski, W. R. Thurber, and M. L. Chun, editied by L. P. Cook (The Electrochemical Society, Pennington, NJ, 2006) (in press).
10.Tapping mode is a proprietary measurement mode of Digital Instruments Inc. Certain commercial equipments, instruments, or materials are identified in this article in order to adequately specify the experimental procedure. Such identification does not imply recommendation or endorsement by NIST, nor does it imply that the materials or equipment used are necessarily the best available for the purpose.
13.S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p. 246.
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