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Comparison of scanning capacitance microscopy and scanning Kelvin probe microscopy in determining two-dimensional doping profiles of Si homostructures
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10.1116/1.2162569
/content/avs/journal/jvstb/24/1/10.1116/1.2162569
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/1/10.1116/1.2162569
/content/avs/journal/jvstb/24/1/10.1116/1.2162569
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/content/avs/journal/jvstb/24/1/10.1116/1.2162569
2006-01-26
2014-10-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparison of scanning capacitance microscopy and scanning Kelvin probe microscopy in determining two-dimensional doping profiles of Si homostructures
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/1/10.1116/1.2162569
10.1116/1.2162569
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