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Comparison of scanning capacitance microscopy and scanning Kelvin probe microscopy in determining two-dimensional doping profiles of Si homostructures
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10.1116/1.2162569
/content/avs/journal/jvstb/24/1/10.1116/1.2162569
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/1/10.1116/1.2162569
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Experimental setup for SKPM measurements.

Image of FIG. 2.
FIG. 2.

Energy-band diagram between a heavily doped -type Si tip and an -type Si semiconductor.

Image of FIG. 3.
FIG. 3.

(a) 2D SCM image and (b) 1D signal measured from the cross section of -step Si layers.

Image of FIG. 4.
FIG. 4.

(a) 2D SKPM image and (b) 1D surface potential obtained from the cross section of -step Si layers.

Image of FIG. 5.
FIG. 5.

One-dimensional dopant profiles of the -step Si structures obtained from SCM (dotted line) and SKPM (solid line).

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/content/avs/journal/jvstb/24/1/10.1116/1.2162569
2006-01-26
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparison of scanning capacitance microscopy and scanning Kelvin probe microscopy in determining two-dimensional doping profiles of Si homostructures
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/1/10.1116/1.2162569
10.1116/1.2162569
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