Test structure of equally spaced B delta layers shows minor differences between the two analysis conditions (Ref. 3).
No-leak analysis of sample N10, a implant into a oxide compared with SRIM simulation data.
Comparison of no-leak SIMS and ERD analyses of sample N10. Data from both techniques agree in the oxide and Si, and most importantly across the interface.
Comparison of SIMS analyses of sample N10 with and without flooding.
Comparison of with and without -flooding SIMS analyses of sample N15, a B implant.
B implant into Si. The comparison of analyses of this sample (N10) before and after oxide was removed shows that no-flooding SIMS is accurate even when the B profile peaks at the surface. Analysis of the etched sample with flooding is correct only if it is capped with .
SIMS analyses, with and without flood, of B ion implant before and after RTA. Near-surface artifacts result in unrealistic profile shapes when flood is used.
No-leak analyses of as-implanted Si and Si samples, all of which were intended to be .
Comparison of analyses conducted with and without flood of a beamline implant shows that for most accurate profile decay length, the sample has to be capped.
Comparison of analyses conducted with and without flood of a beamline implant and PLAD shows that for most accurate peak concentration an uncapped sample should be analyzed with no leak.
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