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Near-surface secondary-ion-mass-spectrometry analyses of plasma-based B ion implants in Sia)
a)No proof corrections received from author prior to publication.
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10.1116/1.2163879
/content/avs/journal/jvstb/24/1/10.1116/1.2163879
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/1/10.1116/1.2163879
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Test structure of equally spaced B delta layers shows minor differences between the two analysis conditions (Ref. 3).

Image of FIG. 2.
FIG. 2.

No-leak analysis of sample N10, a implant into a oxide compared with SRIM simulation data.

Image of FIG. 3.
FIG. 3.

Comparison of no-leak SIMS and ERD analyses of sample N10. Data from both techniques agree in the oxide and Si, and most importantly across the interface.

Image of FIG. 4.
FIG. 4.

Comparison of SIMS analyses of sample N10 with and without flooding.

Image of FIG. 5.
FIG. 5.

Comparison of with and without -flooding SIMS analyses of sample N15, a B implant.

Image of FIG. 6.
FIG. 6.

B implant into Si. The comparison of analyses of this sample (N10) before and after oxide was removed shows that no-flooding SIMS is accurate even when the B profile peaks at the surface. Analysis of the etched sample with flooding is correct only if it is capped with .

Image of FIG. 7.
FIG. 7.

SIMS analyses, with and without flood, of B ion implant before and after RTA. Near-surface artifacts result in unrealistic profile shapes when flood is used.

Image of FIG. 8.
FIG. 8.

No-leak analyses of as-implanted Si and Si samples, all of which were intended to be .

Image of FIG. 9.
FIG. 9.
Image of FIG. 10.
FIG. 10.

Comparison of analyses conducted with and without flood of a beamline implant shows that for most accurate profile decay length, the sample has to be capped.

Image of FIG. 11.
FIG. 11.

Comparison of analyses conducted with and without flood of a beamline implant and PLAD shows that for most accurate peak concentration an uncapped sample should be analyzed with no leak.

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/content/avs/journal/jvstb/24/1/10.1116/1.2163879
2006-01-26
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Near-surface secondary-ion-mass-spectrometry analyses of plasma-based B ion implants in Sia)
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/1/10.1116/1.2163879
10.1116/1.2163879
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