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Effect of rapid thermal annealing on the optical and electrical properties of metamorphic high electron mobility transistor structures with composite channel
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10.1116/1.2163890
/content/avs/journal/jvstb/24/1/10.1116/1.2163890
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/1/10.1116/1.2163890
/content/avs/journal/jvstb/24/1/10.1116/1.2163890
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/content/avs/journal/jvstb/24/1/10.1116/1.2163890
2006-01-20
2014-10-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of rapid thermal annealing on the optical and electrical properties of metamorphic high electron mobility transistor structures with composite InGaAs∕InP channel
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/1/10.1116/1.2163890
10.1116/1.2163890
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