Fabrication of photonic crystals using a spin-coated hydrogen silsesquioxane hard maska)
Etch rate of HSQ silica as a function of bake temperature. The transformation to silica goes further for high temperature. Each sample was spun with a single layer of FOx-12, prebaked at for , baked at for , and finally cured at different temperatures for each. (The CAIBE conditions were those optimized for etching photonic crystals in GaAs.)
Etch rate of HSQ silica as a function of bake duration. The duration of the final bake (at ) was varied between 15 and . (The CAIBE conditions were those optimized for etching photonic crystals in GaAs.)
TLM measurement of the contact resistance of PEVCD silica masked device (circles with the fit as a solid line) and that of HSQ silica masked device (squares with the fit as a dashed line). The contact resistance can be determined from the -axis intercept (see inset).
Two-dimensional photonic crystal pattern created using silica. The period is and the hole size is .
One-dimensional photonic crystal etched in GaAs. A high-beam-voltage low-beam-current regime of CAIBE was used (Ref. 3). A significant amount of mask remains. The HSQ mask shown here was cured at .
One-dimensional photonic crystal in InP. Deep high verticality features are achieved using a -thick spin-coated HSQ silica hard mask.
Two-dimensional photonic crystal in InP. An etch depth of is achieved. The hole diameter is .
Trench etched to a depth of in InP using a -thick HSQ mask.
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