(a) MIS structures fabricated to study the and measurements. (b) Sample structure fabricated specially for SIMS analysis.
FTIR spectra of the various films deposited on substrate. Curve (1) only HSQ, curves (2)–(4) with thicknesses of 17, 42, and 84 nm, respectively, and curve (5) only (200 nm).
characteristics of and MIS structures.
characteristics of stack for different thicknesses of , curve (2) 17 nm, curve (3) 42 nm, and curve (4) 84 nm. characteristics for the HSQ film [curve (1)] with Cu are also shown for reference.
Variation of the dielectric constant of the composite layer as a function of the film thickness.
SIMS data of Cu diffusion in the structure.
SIMS depth profile of and film structures annealed at 400 °C for 1 h.
Process parameters for the HWCVD .
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