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Hot-wire chemical-vapor-deposited nanometer range diffusion barrier films for ultralarge-scale-integrated application
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10.1116/1.2166862
/content/avs/journal/jvstb/24/2/10.1116/1.2166862
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/2/10.1116/1.2166862

Figures

Image of FIG. 1.
FIG. 1.

(a) MIS structures fabricated to study the and measurements. (b) Sample structure fabricated specially for SIMS analysis.

Image of FIG. 2.
FIG. 2.

FTIR spectra of the various films deposited on substrate. Curve (1) only HSQ, curves (2)–(4) with thicknesses of 17, 42, and 84 nm, respectively, and curve (5) only (200 nm).

Image of FIG. 3.
FIG. 3.

characteristics of and MIS structures.

Image of FIG. 4.
FIG. 4.

characteristics of stack for different thicknesses of , curve (2) 17 nm, curve (3) 42 nm, and curve (4) 84 nm. characteristics for the HSQ film [curve (1)] with Cu are also shown for reference.

Image of FIG. 5.
FIG. 5.

Variation of the dielectric constant of the composite layer as a function of the film thickness.

Image of FIG. 6.
FIG. 6.

SIMS data of Cu diffusion in the structure.

Image of FIG. 7.
FIG. 7.

SIMS depth profile of and film structures annealed at 400 °C for 1 h.

Tables

Generic image for table
TABLE I.

Process parameters for the HWCVD .

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/content/avs/journal/jvstb/24/2/10.1116/1.2166862
2006-02-08
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hot-wire chemical-vapor-deposited nanometer range a-SiC:H diffusion barrier films for ultralarge-scale-integrated application
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/2/10.1116/1.2166862
10.1116/1.2166862
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