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Effects of -type modulation-doping barriers and a linear graded-composition intermediate layer on the strain-compensated multiple-quantum-well laser diodes
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10.1116/1.2172954
/content/avs/journal/jvstb/24/2/10.1116/1.2172954
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/2/10.1116/1.2172954

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic device structure of the -type MD-SC-MQW LDs with a LGC intermediate layer. (b) the zinc doping profiles measured by chemical etching capacitance-voltage measurements. (c) the Si-doping profile in MQW determined by SIMS.

Image of FIG. 2.
FIG. 2.

cw light output power at as a function of injection current for the -long as-cleaved LD structures for samples A, B, C, and D. The inset shows the dependence of current as a function of voltage for four LD structures.

Image of FIG. 3.
FIG. 3.

Dependence of threshold current as a function of operation temperature for the four LD structures for samples A, B, C, and D.

Image of FIG. 4.
FIG. 4.

Lasing wavelength dependence at a driving current of as a function of operation temperature for samples A, B, C, and D.

Image of FIG. 5.
FIG. 5.

Frequency response as a function of injection current for samples B, C, and D.

Image of FIG. 6.
FIG. 6.

Threshold current and light output power at a drive current against the chips. The inset indicates the position of adopted chips.

Tables

Generic image for table
TABLE I.

Summary of the static characteristics for samples A, B, C, and D.

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/content/avs/journal/jvstb/24/2/10.1116/1.2172954
2006-02-23
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of n-type modulation-doping barriers and a linear graded-composition GaInAsP intermediate layer on the 1.3μmAlGaInAs∕AlGaInAs strain-compensated multiple-quantum-well laser diodes
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/2/10.1116/1.2172954
10.1116/1.2172954
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