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Effects of -type modulation-doping barriers and a linear graded-composition intermediate layer on the strain-compensated multiple-quantum-well laser diodes
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10.1116/1.2172954
/content/avs/journal/jvstb/24/2/10.1116/1.2172954
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/2/10.1116/1.2172954
/content/avs/journal/jvstb/24/2/10.1116/1.2172954
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/content/avs/journal/jvstb/24/2/10.1116/1.2172954
2006-02-23
2014-09-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of n-type modulation-doping barriers and a linear graded-composition GaInAsP intermediate layer on the 1.3μmAlGaInAs∕AlGaInAs strain-compensated multiple-quantum-well laser diodes
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/2/10.1116/1.2172954
10.1116/1.2172954
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