(a) Schematic device structure of the -type MD-SC-MQW LDs with a LGC intermediate layer. (b) the zinc doping profiles measured by chemical etching capacitance-voltage measurements. (c) the Si-doping profile in MQW determined by SIMS.
cw light output power at as a function of injection current for the -long as-cleaved LD structures for samples A, B, C, and D. The inset shows the dependence of current as a function of voltage for four LD structures.
Dependence of threshold current as a function of operation temperature for the four LD structures for samples A, B, C, and D.
Lasing wavelength dependence at a driving current of as a function of operation temperature for samples A, B, C, and D.
Frequency response as a function of injection current for samples B, C, and D.
Threshold current and light output power at a drive current against the chips. The inset indicates the position of adopted chips.
Summary of the static characteristics for samples A, B, C, and D.
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