1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Ohmic contact scheme for high electron mobility transistors annealed at 500 °C
Rent:
Rent this article for
USD
10.1116/1.2178365
    + View Affiliations - Hide Affiliations
    Affiliations:
    1 Micro and Nanotechnology Laboratory, University of Illinois at Urbana–Champaign, Urbana, Illinois 61801 and Department of Electrical and Computer Engineering, University of Illinois at Urbana–Champaign, Urbana, Illinois 61801
    2 Micro and Nanotechnology Laboratory, University of Illinois at Urbana–Champaign, Urbana, Illinois 61801 and Department of Materials Science and Engineering, University of Illinois at Urbana–Champaign, Urbana, Illinois 61801
    3 Emcore Corporation, 145 Belmont Drive, Somerset, New Jersey 08873
    4 Micro and Nanotechnology Laboratory, University of Illinois at Urbana–Champaign, Urbana, Illinois 61801 and Department of Electrical and Computer Engineering, University of Illinois at Urbana–Champaign, Urbana, Illinois 61801
    a) Electronic mail: iadesida@uiuc.edu
    J. Vac. Sci. Technol. B 24, L16 (2006); http://dx.doi.org/10.1116/1.2178365
/content/avs/journal/jvstb/24/2/10.1116/1.2178365
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/2/10.1116/1.2178365
/content/avs/journal/jvstb/24/2/10.1116/1.2178365
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/avs/journal/jvstb/24/2/10.1116/1.2178365
2006-03-21
2014-08-30
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mo∕Al∕Mo∕Au Ohmic contact scheme for AlxGa1−xN∕GaN high electron mobility transistors annealed at 500 °C
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/2/10.1116/1.2178365
10.1116/1.2178365
SEARCH_EXPAND_ITEM