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Simulation of vertical and lateral ZnO light-emitting diodes
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10.1116/1.2180255
/content/avs/journal/jvstb/24/2/10.1116/1.2180255
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/2/10.1116/1.2180255
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of vertical geometry ZnO LED used in the simulations.

Image of FIG. 2.
FIG. 2.

Schematic of vertical geometry ZnO LED used in the simulations.

Image of FIG. 3.
FIG. 3.

Total current density distribution at in the vertical structure.

Image of FIG. 4.
FIG. 4.

Total current density distribution at in the lateral structure.

Image of FIG. 5.
FIG. 5.

Output power (top) and optical intensity (bottom) at and peak wavelength as a function of active layer thickness for both LED geometries.

Image of FIG. 6.
FIG. 6.

Simulated EL spectra as a function of doping level in the layer from the vertical (top) and lateral (bottom) geometry structures.

Image of FIG. 7.
FIG. 7.

Output power (top) and optical intensity (bottom) at and peak wavelength as a function of -layer doping for both LED geometries.

Image of FIG. 8.
FIG. 8.

Current density (top) and output intensity (bottom) at and peak wavelength as a function of doping level in the layer.

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/content/avs/journal/jvstb/24/2/10.1116/1.2180255
2006-03-07
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Simulation of vertical and lateral ZnO light-emitting diodes
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/2/10.1116/1.2180255
10.1116/1.2180255
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