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Simulations of emission characteristics of a multigated single carbon nanotube field emitter
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10.1116/1.2181990
/content/avs/journal/jvstb/24/2/10.1116/1.2181990
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/2/10.1116/1.2181990
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the simulated quadruple-gated single carbon nanotube field emitter. The MWCNT is assumed to be a cylinder with an ellipsoidal cap of major radius and minor radius, and in base diameter. The thickness of each gate is .

Image of FIG. 2.
FIG. 2.

Simulation grids in the neighborhood of the MWCNT tip. Typical particle trajectories near the MWCNT tip are also shown. Only the electron-beam trajectories emanating from the first six consecutive emitting surface segments on each side of the symmetry axis are shown. In order to show the trajectories more clearly, the emission location is set at the center of each MWCNT surface segment.

Image of FIG. 3.
FIG. 3.

Simulation results of the emission current and the weighted beam radius as a function of the gate 3 voltage for the case with MWCNT height of . The applied voltages of the quadruple-gated field emitter are 0, 85, 224, 1331, and , respectively, for the cathode, first gate, second gate, fourth gate, and the anode.

Image of FIG. 4.
FIG. 4.

Potential contours for the case with MWCNT height of at different gate 3 voltages. The applied voltages of the quadruple-gated field emitter are 0, 85, 224, 1331, and , respectively, for the cathode, first gate, second gate, fourth gate, and the anode.

Image of FIG. 5.
FIG. 5.

Emitted electrons from each surface segment on the MWCNT tip hit the anode plane at different distances from the symmetry axis. The simulation case is for MWCNT height of and the applied voltages of the quadruple-gated field emitter are 0, 85, 224, 1331, and , respectively, for the cathode, first gate, second gate, fourth gate, and the anode.

Image of FIG. 6.
FIG. 6.

Electron-beam trajectories for the case with MWCNT height of . The applied voltages of the quadruple-gated field emitter are 0, 85, 224, 1320, 1331, and , respectively, for the cathode, first gate, second gate, third gate, fourth gate, and the anode. The gate 3 voltage is at its optimum value of to focus the emitted electrons.

Image of FIG. 7.
FIG. 7.

Electron-beam trajectories for the case with MWCNT height of . The applied voltages of the quadruple-gated field emitter are 0, 85, 224, 300, 1331, and , respectively, for the cathode, first gate, second gate, third gate, fourth gate, and the anode. The gate 3 voltage is at a local optimum value of to focus the emitted electrons.

Image of FIG. 8.
FIG. 8.

Emission current density contours for the case with MWCNT height of . The applied voltages of the quadruple-gated field emitter are 0, 85, 224, 1320, 1331, and , respectively, for the cathode, first gate, second gate, third gate, fourth gate, and the anode. The gate 3 voltage is at its optimum value of to focus the emitted electrons.

Image of FIG. 9.
FIG. 9.

Simulation results of the emission current and the weighted beam radius as a function of the gate 3 voltage for the case with MWCNT height of . The applied voltages of the quadruple-gated field emitter are 0, 59, 155, 924, and , respectively, for the cathode, first gate, second gate, fourth gate, and the anode.

Image of FIG. 10.
FIG. 10.

Simulation results of the emission current and the weighted beam radius as a function of the gate 3 voltage for the case with MWCNT height of . The applied voltages of the quadruple-gated field emitter are 0, 95, 252, 1496, and , respectively, for the cathode, first gate, second gate, fourth gate, and the anode.

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/content/avs/journal/jvstb/24/2/10.1116/1.2181990
2006-03-27
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Simulations of emission characteristics of a multigated single carbon nanotube field emitter
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/2/10.1116/1.2181990
10.1116/1.2181990
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