SEM image of the etched GaN sample surface morphology with different chamber pressures of (a) , (b) , (c) , and (d) at the same flow rate of , and ICP/bias power of for a etching time.
(a) Top view SEM image of the Mg-doped GaN nanorod. (b) High resolution SEM image of Mg-doped GaN nanorod.
Mean dimension and density of GaN nanostructure as a function of the chamber pressure which is varied from .
Micro-PL spectra of Mg-doped GaN nanorods (solid line) and Mg-doped GaN film (dash line) at excitation power density of .
PL peak energy as a function of the excitation power density. Filled (open) square represents Mg-doped GaN nanorod (film) while the open circle indicates the undoped GaN nanorod.
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