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Fabrication and characteristics of -channel silicon-oxide-nitride-oxide-silicon flash memory device based on bulk fin shaped field effect transistor structure
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10.1116/1.2197510
/content/avs/journal/jvstb/24/3/10.1116/1.2197510
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/3/10.1116/1.2197510
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Bird’s eye view of the omega SONONS flash memory ( SONOS flash memory device).

Image of FIG. 2.
FIG. 2.

Three-dimensional cross-sectional views of omega SONOS flash memory fabrication.

Image of FIG. 3.
FIG. 3.

TEM cross section image of -channel SONOS flash memory device. Left view is cross section of channel region of device. Right view shows oxide-nitride-oxide (ONO) layer and their thicknesses.

Image of FIG. 4.
FIG. 4.

characteristics of the -channel SONOS flash memory device with (100) top and (110) side surfaces of the channel in the body. We just regard this device as the (110) device.

Image of FIG. 5.
FIG. 5.

Measured program/erase characteristics of a -channel SONOS flash memory device.

Image of FIG. 6.
FIG. 6.

FN erase characteristics with different source/drain biasing conditions.

Image of FIG. 7.
FIG. 7.

Program/erase time of the -channel SONOS flash memory device with respect to fin width variation. The is fixed at .

Image of FIG. 8.
FIG. 8.

Endurance characteristics of the -channel SONOS flash memory device. The fin width is and the is .

Image of FIG. 9.
FIG. 9.

Retention characteristics of -channel SONOS flash memory device after . The bake temperature is . The fin width is and the is .

Image of FIG. 10.
FIG. 10.

FN erasing characteristics of the -channel SONOS flash memory device with (100) and (110) surfaces. The is fixed at .

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/content/avs/journal/jvstb/24/3/10.1116/1.2197510
2006-04-25
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication and characteristics of P-channel silicon-oxide-nitride-oxide-silicon flash memory device based on bulk fin shaped field effect transistor structure
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/3/10.1116/1.2197510
10.1116/1.2197510
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