No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Fabrication and characteristics of -channel silicon-oxide-nitride-oxide-silicon flash memory device based on bulk fin shaped field effect transistor structure
Article metrics loading...
Full text loading...
Most read this month