1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Ion and neutral transportation consideration in etching of thin in high aspect ratio structures for aspect ratio independent etching
Rent:
Rent this article for
USD
10.1116/1.2197512
/content/avs/journal/jvstb/24/3/10.1116/1.2197512
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/3/10.1116/1.2197512
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Sample preparation for the experiment (a). (b) Cross sectional SEM image showing the profile of contact holes for the experiment.

Image of FIG. 2.
FIG. 2.

variation as a function of temperature with a high bias and chemistry.

Image of FIG. 3.
FIG. 3.

variations as a function of temperature for various gas chemistries.

Image of FIG. 4.
FIG. 4.

Comparisons of profiles etched at two different temperatures: and . They are just etched by detecting the end point by monitoring the removal of on the top surface of the sample. (a) 9 , (b) 9 , and (c) 9 .

Image of FIG. 5.
FIG. 5.

Etch rates of on blanket wafers as a function of temperature with various gas chemistries.

Image of FIG. 6.
FIG. 6.

Variation of as a function of temperature for case II.

Image of FIG. 7.
FIG. 7.

as a function of pressure for (a) case II (b) case I conditions.

Loading

Article metrics loading...

/content/avs/journal/jvstb/24/3/10.1116/1.2197512
2006-05-01
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ion and neutral transportation consideration in etching of thin Si3N4 in high aspect ratio structures for aspect ratio independent etching
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/3/10.1116/1.2197512
10.1116/1.2197512
SEARCH_EXPAND_ITEM