(a) Sample preparation for the experiment (a). (b) Cross sectional SEM image showing the profile of contact holes for the experiment.
variation as a function of temperature with a high bias and chemistry.
variations as a function of temperature for various gas chemistries.
Comparisons of profiles etched at two different temperatures: and . They are just etched by detecting the end point by monitoring the removal of on the top surface of the sample. (a) 9 , (b) 9 , and (c) 9 .
Etch rates of on blanket wafers as a function of temperature with various gas chemistries.
Variation of as a function of temperature for case II.
as a function of pressure for (a) case II (b) case I conditions.
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