Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti–Si–N thin films
Schematic diagram of plasma-enhanced atomic layer deposition apparatus.
Dependence of the growth rate and silicon content in the Ti–Si–N films on the pulse time. The films were grown on at with the sequential supply of for , for , and plasma for . The partial pressure of was fixed at .
Dependence of the growth rate and silicon content in the Ti–Si–N films on the pulse time by different reactant exposure sequence. The reactants were supplied in the sequence of for , for , and plasma for .
XRD patterns obtained from the TiN and Ti–Si–N films deposited by PEALD.
Plan-view TEM micrographs of (a) TiN and (b) Ti–Si–N prepared by PEALD at .
XPS peaks of (a) nitrogen and (b) silicon measured for Ti–Si–N films by PEALD.
Change of sheet resistance on Cu/ PEALD TiN and Cu/ PEALD Ti–Si–N as a function of annealing temperature.
XRD patterns of Cu/ PEALD TiN and Cu/ PEALD Ti–Si–N as a function of annealing temperature.
Summary of PEALD Ti–Si–N from various exposure sequences using , , and plasma.
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