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Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti–Si–N thin films
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10.1116/1.2198846
/content/avs/journal/jvstb/24/3/10.1116/1.2198846
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/3/10.1116/1.2198846

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of plasma-enhanced atomic layer deposition apparatus.

Image of FIG. 2.
FIG. 2.

Dependence of the growth rate and silicon content in the Ti–Si–N films on the pulse time. The films were grown on at with the sequential supply of for , for , and plasma for . The partial pressure of was fixed at .

Image of FIG. 3.
FIG. 3.

Dependence of the growth rate and silicon content in the Ti–Si–N films on the pulse time by different reactant exposure sequence. The reactants were supplied in the sequence of for , for , and plasma for .

Image of FIG. 4.
FIG. 4.

XRD patterns obtained from the TiN and Ti–Si–N films deposited by PEALD.

Image of FIG. 5.
FIG. 5.

Plan-view TEM micrographs of (a) TiN and (b) Ti–Si–N prepared by PEALD at .

Image of FIG. 6.
FIG. 6.

XPS peaks of (a) nitrogen and (b) silicon measured for Ti–Si–N films by PEALD.

Image of FIG. 7.
FIG. 7.

Change of sheet resistance on Cu/ PEALD TiN and Cu/ PEALD Ti–Si–N as a function of annealing temperature.

Image of FIG. 8.
FIG. 8.

XRD patterns of Cu/ PEALD TiN and Cu/ PEALD Ti–Si–N as a function of annealing temperature.

Tables

Generic image for table
TABLE I.

Summary of PEALD Ti–Si–N from various exposure sequences using , , and plasma.

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/content/avs/journal/jvstb/24/3/10.1116/1.2198846
2006-05-10
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti–Si–N thin films
http://aip.metastore.ingenta.com/content/avs/journal/jvstb/24/3/10.1116/1.2198846
10.1116/1.2198846
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