Interface configuration and Fermi-level pinning of fully silicided gate and high- dielectric stack
(a) vs of four metal silicides on . The value is calculated by taking the geometric mean of and with various stoichiometries (x) between metal and silicon. (b) The parameter and the charge neutrality level on as a function of at .
vs of on and HfAlON. The value of HfAlON is nearly identical to the calculated value of around 0.63 obtained from Eq. (2).
Comparison of value of various gate electrodes on high- gate dielectrics. HfAlON with FUSI gate shows weak Fermi-level pinning, even though Si atoms are present at the interface of FUSI gate/HfAlON stack.
Comparison of and of each FUSI gate on . The values are obtained from the equation of where .
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